ELECTRON BEAM LITHOGRAPHY

ZEL304G Electron Beam Lithography System

A Schottky field-emission electron beam lithography system for nanoscale patterning, aligned multilayer exposure and advanced research.

Brand ZEPTOOLSSupplied by SENFU Technology
ZEL304G Electron Beam Lithography System product image
ZEL304GSOURCE-BACKED RECORD
Electron GunSchottky field emission
Image Resolution≤1 nm @ 15 kV / ≤1.5 nm @ 1 kV
Beam Current≥100 nA
Minimum Spot Size≤2 nm

PRODUCT OVERVIEW

Selection starts with the operating requirement.

ZEL304G addresses critical nanoscale structures where electron-beam resolution is required. Stage and acceleration-voltage wording remains qualified pending manufacturer confirmation.

Open technical itemStage-travel semantics and the stated minimum acceleration voltage require confirmation.

ENGINEERING VALUE

What this platform brings to the design.

01

Nanoscale patterning

Field-emission electron optics support critical feature development below optical lithography scale.

02

Aligned exposure

Documented functions include field stitching, overlay and multi-layer exposure.

03

Pattern workflow

GDSII, DXF and BMP inputs connect established design formats to the write system.

KEY SPECIFICATIONS

Source-backed technical data.

These fields are projected from the product master record. Conflicting, missing and internal-only values do not enter this table.

Electron Gun
Schottky field emission
Image Resolution
≤1 nm @ 15 kV / ≤1.5 nm @ 1 kV
Beam Current
≥100 nA
Minimum Spot Size
≤2 nm
Write Field
≤500 × 500 µm
Single Exposure Linewidth
<15 nm · Process dependent
Dac Resolution
20 bit
Pattern Formats
GDSII / DXF / BMP

Source record: SRC-ZEP-ZEL-BRO-001

SUITABLE APPLICATIONS

Evaluate fit in context.

Quantum devices
Nanophotonics
2D materials
Advanced semiconductor R&D

ENGINEERING DOCUMENTATION

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TECHNICAL EVALUATION

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