Critical dimension
Separate imaging resolution, beam spot and exposed linewidth when defining the process target.
NANOSCALE DIRECT WRITE
Electron beam lithography systems.
Field-emission electron-beam patterning for critical nanoscale structures, alignment and multilayer research workflows.
Request a recommendation ↗ENGINEERING REQUIREMENTS
Define the selection boundary first.
Write strategy
Evaluate field size, stitching, dwell, beam current and proximity correction together.
Alignment workflow
Specify overlay, stage metrology, sample format and multilayer exposure requirements.
AVAILABLE MODELS
Compare source-backed first-selection data.
Stage-travel semantics and minimum acceleration-voltage wording remain qualified pending confirmation.
ModelTypeKey specificationPositioning
ZEL304GSchottky field emission≤2 nm minimum spot documentedAdvanced nanofabrication→APPLICATION REVIEW
Need the right configuration, not just the nearest model?
Share the operating requirement and available integration envelope. We will structure a technical comparison.
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